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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV36 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 May 30 1996 Jul 01 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed BYV36 series construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYV36A BYV36B BYV36C BYV36D BYV36E BYV36F BYV36G VR continuous reverse voltage BYV36A BYV36B BYV36C BYV36D BYV36E BYV36F BYV36G IF(AV) average forward current BYV36A to C BYV36D and E BYV36F and G IF(AV) average forward current BYV36A to C BYV36D and E BYV36F and G a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - - - - - - - - - - - - - MAX. 200 400 600 800 1000 1200 1400 200 400 600 800 1000 1200 1400 1.6 1.5 1.5 0.87 0.81 0.81 V V V V V V V V V V V V V V A A A A A A UNIT Ttp = 60 C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 Tamb = 60 C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 - - - - - - 1996 Jul 01 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYV36A to C BYV36D and E BYV36F and G IFRM repetitive peak forward current BYV36A to C BYV36D and E BYV36F and G IFSM ERSM Tstg Tj non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax non-repetitive peak reverse avalanche energy storage temperature junction temperature see Figs 17 and 18 L = 120 mH; Tj = Tj max prior to surge; inductive load switched off Tamb = 60 C; see Figs 11; 12 and 13 - - - - - -65 -65 CONDITIONS Ttp = 60 C; see Figs 8; 9 and 10 - - - BYV36 series MIN. MAX. 18 17 15 9 8 8 30 10 +175 +175 A A A A A A A UNIT mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYV36A to C BYV36D and E BYV36F and G VF forward voltage BYV36A to C BYV36D and E BYV36F and G V(BR)R reverse avalanche breakdown voltage BYV36A BYV36B BYV36C BYV36D BYV36E BYV36F BYV36G IR reverse current VR = VRRMmax; see Fig.22 VR = VRRMmax; Tj = 165 C; see Fig.22 IR = 0.1 mA 300 500 700 900 1100 1300 1500 - - - - - - - - - - - - - - - - - - 5 150 V V V V V V V A A IF = 1 A; see Figs 19; 20 and 21 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 19; 20 and 21 MIN. - - - - - - TYP. - - - - - - MAX. 1.00 1.05 1.05 1.35 1.45 1.45 V V V V V V UNIT 1996 Jul 01 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL trr PARAMETER reverse recovery time BYV36A to C BYV36D and E BYV36F and G Cd diode capacitance BYV36A to C BYV36D and E BYV36F and G dI R -------dt maximum slope of reverse recovery when switched from IF = 1 A to VR 30 V and current dIF/dt = -1 A/s; BYV36A to C see Fig.27 BYV36D and E BYV36F and G THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm f = 1 MHz; VR = 0 V; see Figs 23 and 24 CONDITIONS when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 26 MIN. - - - - - - BYV36 series TYP. - - - 45 40 35 MAX. 100 150 250 - - - UNIT ns ns ns pF pF pF - - - - - - 7 6 5 A/s A/s A/s VALUE 46 100 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.25. For more information please refer to the "General Part of associated Handbook". 1996 Jul 01 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA 1.6 I F(AV) (A) 1.2 20 15 10 lead length (mm) MSA867 BYV36 series 1.6 I F(AV) (A) 1.2 20 15 10 MSA866 lead length (mm) 0.8 0.8 0.4 0.4 0 0 BYV36A to C a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200 0 0 BYV36D and E a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200 Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 2.0 I F(AV) (A) 1.6 MBD419 handbook, halfpage 1.2 MSA865 I F(AV) (A) lead length 10 mm 0.8 1.2 0.8 0.4 0.4 0 0 100 Ttp ( C) o 0 200 0 100 Tamb ( oC) 200 BYV36F and G a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. BYV36A to C a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.4 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). 1996 Jul 01 5 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series handbook, halfpage 1.2 MSA864 handbook, halfpage 1.2 MBD420 I F(AV) (A) 0.8 I F(AV) (A) 0.8 0.4 0.4 0 0 100 Tamb ( oC) 200 0 0 100 T amb ( oC) 200 BYV36D and E a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.25. Switched mode application. BYV36F and G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.6 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.7 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). 20 I FRM (A) 16 = 0.05 MBD446 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36A to C Ttp = 60C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series 20 I FRM (A) 16 = 0.05 MBD447 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36D and E Ttp = 60C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 16 I FRM (A) 12 = 0.05 MLB529 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36F and G Ttp = 60C; Rth j-tp = 46 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series 10 I FRM (A) 8 MBD441 = 0.05 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36A to C Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 600 V. Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 I FRM (A) 8 = 0.05 MBD444 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36D and E Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jul 01 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series 8 I FRM (A) 6 = 0.05 MLB530 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV36F and G Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 3 P (W) 2 2.5 2 1.57 a=3 MSA861 3 P (W) 2 2.5 2 1.57 a=3 1.42 MSA862 1.42 1 1 0 0 BYV36A to C a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. 1 I F(AV) (A) 2 0 0 1 I F(AV) (A) 2 BYV36D and E a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.14 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.15 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jul 01 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series 3 P (W) 2 a=3 MBD429 handbook, halfpage 200 MSA857 2.5 2 1.57 1.42 Tj ( oC) 100 1 A B C D E 0 0 1 I F(AV)(A) 2 0 0 400 800 V R (V) 1200 BYV36F and G a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. BYV36A to E Solid line = VR. Dotted line = VRRM; = 0.5. Fig.16 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.17 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage 200 MLB599 MSA863 handbook, halfpage 10 IF (A) Tj ( oC) 8 6 100 4 F G 2 0 0 0 1000 VR (V) 2000 0 1 2 VF (V) 3 BYV36F and G Solid line = VR. Dotted line = VRRM; = 0.5. BYV36A to C Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.18 Maximum permissible junction temperature as a function of reverse voltage. Fig.19 Forward current as a function of forward voltage; maximum values. 1996 Jul 01 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series MLB531 MBD424 handbook, halfpage 10 IF (A) handbook, halfpage 10 IF (A) 8 8 6 6 4 4 2 2 0 0 1 2 3 VF (V) 4 0 0 1 2 VF (V) 3 BYV36D and E Dotted line: Tj = 175 C. Solid line: Tj = 25 C. BYV36F and G Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.20 Forward current as a function of forward voltage; maximum values. Fig.21 Forward current as a function of forward voltage; maximum values. 103 handbook, halfpage IR (A) 102 MGC550 10 2 handbook, halfpage MSA868 Cd (pF) BYV36A,B,C 10 BYV36D,E 10 1 0 100 Tj (C) 200 1 1 10 102 V R (V) 103 VR = VRRMmax. BYV36A to E. f = 1 MHz; Tj = 25 C. Fig.22 Reverse current as a function of junction temperature; maximum values. Fig.23 Diode capacitance as a function of reverse voltage, typical values. 1996 Jul 01 11 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series 10 2 handbook, halfpage MBD436 handbook, halfpage 50 25 Cd (pF) 7 50 10 2 3 1 1 10 10 2 10 3 V R (V) 10 4 MGA200 BYV36F and G. f = 1 MHz; Tj = 25 C. Dimensions in mm. Fig.24 Diode capacitance as a function of reverse voltage, typical values. Fig.25 Device mounted on a printed-circuit board. handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.26 Test circuit and reverse recovery time waveform and definition. 1996 Jul 01 12 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.27 Reverse recovery definitions. 1996 Jul 01 13 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BYV36 series a 0.81 max 28 min MBC880 Fig.28 SOD57. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Jul 01 14 |
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